Device Electronics

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The Published Unexamined Japanese Patent Application Heisei 11-312801 (1999) discloses a multilayer thin ?lm having a metal thin ?lm that is an epitaxial ?lm of (100) single-oriented cubic crystal, and a buffer layer having a {111} facet located at the interface With the metal thin ?lm. According to the techniques disclosed in the above mentioned Published Unexamined Japanese Patent Applica tion Heisei 11-260835 and Published Unexamined Japanese Patent Application Heisei 11-312801, the buffer layer is .

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